sot-343 unit: mm BAR81W features design for use in shunt configuration high shunt signal isolation low shunt insertion loss absolute maximum ratings ta = 25 parameter symbol value unit diode reverse voltage v r 30 v forward current i f 100 ma total power dissipation, t s = 103 p tot 100 mw junction temperature t j 150 operating temperature range t op -55to+125 storage temperature range t stg -55to+150 junction - ambient 1) r th ja 200 k/w junction - soldering point r th js 120 k/w note 1.package mounted on alumina 15mm 16.7mm 0.7mm electrical characteristics ta = 25 parameter symbol test condition min typ max unit reverse current i r v r = 20 v 20 na forward voltage v f i f = 100 ma 0.93 1 v v r =1v,f=1mhz 0.6 v r = 3 v, f = 1 mhz 0.57 forward resistance rf i f = 5 ma, f = 100 mhz 0.7 series inductance t rr 0.15 nh pf diode capacitance c t marking marking bbs product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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